Infineon doubles down on wide bandgap
investing more than €2 billion in a new Kulim, Malaysia frontend fab to expand market leadership in power semiconductors ...
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Tag: power semiconductors
NexGen Power Systems Appoints Guruswamy Ganesh as Chief Systems Officer
Building an Industry Leading Management Team, NexGen Power Systems adds Former SVP, Product Development from Western Digital to Lead Global ...
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500W Heatsinkless Audio Amplifier from Axign and GaN Systems Demonstrates a New World of Extraordinary Audio Performance
Companies unveil revolutionary, high-efficiency Class-D amplifier at CES 2022 OTTAWA, Canada AND LAS VEGAS – January 6, 2022 – GaN ...
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Microchip to Provide Silicon Carbide MOSFETs and Digital Gate Drivers for Mersen’s SiC Power Stack Reference Design
Electric vehicle, commercial transportation, renewable energy and storage system designers can benefit from silicon carbide stack solution that drives performance ...
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Nexperia expands its wide bandgap semiconductor offering with new family of high-performance Silicon Carbide (SiC) Diodes
Samples of industrial-grade 650 V, 10 A SiC Schottky diode now available. Parts with 1200 V / 6-20 A current ...
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Robust Isolated SiC Gate Driver from STMicroelectronics Saves Space in Narrow SO-8 Package
Oct 18, 2021: STMicroelectronics’ STGAP2SiCSN single-channel gate driver, optimized to control silicon-carbide MOSFETs, comes in a space-saving narrow-body SO-8 package ...
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Infineon and Panasonic accelerate GaN technology development for 650 V GaN power devices
Munich, Germany and Osaka, Japan – 2 September 2021 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) and Panasonic ...
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Nexperia launches ‘Power Live’September 21-23 2021
Participate in live discussions on GaN, MOSFETs, power diodes and bipolar transistors for automotive and industrial applications;View on-demand video demos ...
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New Higher Performance, Lower Cost Transistors Debut from GaN Systems
OTTAWA, Ontario, August 10, 2021 – GaN Systems, the global leader in GaN power semiconductors, today introduced two new transistors ...
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Replace Silicon IGBTs with Industry’s Most Rugged Silicon Carbide Power Solutions Now Available at 1700V
Silicon carbide portfolio with 1700V MOSFET die, discrete and power module devices extend designers’ options for efficiency, power density New ...
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