Infineon adds 40 V device in PQFN to its OptiMOS™ Source-Down power MOSFET family
Munich, Germany – 29 October 2020 – Contemporary power system designs demand high power density levels and small form factors ...
Read moreMunich, Germany – 29 October 2020 – Contemporary power system designs demand high power density levels and small form factors ...
Read moreMunich, Germany – 30 July, 2020 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces a new IGBT power module tailored ...
Read moreMunich, Germany, and El Segundo, California – 29 July 2020 – On Thursday this week, NASA Jet Propulsion Laboratory is ...
Read moreBLF978P – 1200W Si LDMOS and BLF974P – 500W Si LDMOS Nijmegen, The Netherlands, 02 July 2020 - Ampleon today ...
Read morehttps://www.semiconductorforu.com/infineon-strongirfet-mosfet-in-d%c2%b2pak-7pin-package/ Munich, Germany – 12 May 2020 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) complements its StrongIRFET™ 40-60 ...
Read moreMay 5, 2020 – XP Power announces the new ECH450 series of compact, high efficiency power supplies available in open ...
Read moreMunich, Germany – 30 April 2020 – Supporting the needs of the electro-mobility market, Infineon Technologies AG (FSE: IFX / ...
Read moreMunich, Germany – 26 March 2020 – Infineon Technologies AG expands its CoolSiC™ Schottky diode 1200 V portfolio by adding ...
Read moreMunich, Germany – 18 December 2019 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduced the new IGBT7 chip ...
Read moreMunich, Germany – 27 November 2019 – Infineon Technologies Bipolar GmbH & Co. KG has expanded its product portfolio of ...
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