Tag: GaN

Combined Technology Is Industry’s First Solution Designed to Replace Analog Controls In GaN Power Supplies, Could Introduce ‘New Era’ in ...

French public R&I organisation to use CGD’s GaN HEMTs in innovative, next-gen automotive inverter design 13.12.22 Cambridge, UK - Cambridge ...

Ceremony to be held at 10 am, November 17th on Neways’ booth, Hall A1, Stand 306, Messe München, Munich, Germany ...

Cambridge spin-out in mass production and scaling up innovative product range; 15-18 November, Hall C3, Booth 535, Messe München, Munich, ...

Cooperation will bring significant advantages to next-generation systems using power-efficient gallium-nitride (GaN) technology across a spectrum of applications Brussels, Belgium, ...

High Output Power, High Efficiency of >700W GaN-SiC HEMT transistor for Long Pulse Radar Applications Nijmegen, The Netherlands, 26 September ...

The New GaN-Powered Wall Charger Delivers Breakthroughs in Power Efficiency, Charging Speeds, and Sustainability OTTAWA, Canada – July 27, 2022 ...

WI62120 Gives Power Electronics Designers New Density, Performance, Efficiency Options; Wide Range of Applications Seen in Consumer, Mobile, Industrial Power ...

Combining proven GaN technology with innovative packaging expertise Nijmegen, May 19, 2022: Nexperia, the expert in essential semiconductors, has announced ...

In-person talks and demos aim to inspire innovative power designs Nijmegen, April 21, 2022: Nexperia, the expert in essential semiconductors, ...