Jon Zhang, who has spent the last 16 years innovating in SiC power devices at companies including Rockwell and Cree, has joined PowerAmerica as director of Power Device Technology.
Zhang received his PhD in 2001 from the University of South Carolina. His career milestones also include demonstrating the industry first reported trench MOSFET with dual buffer layers on SiC (2005), first reported 12 kV IGBT on SiC (2007), first reported trench Schottky diode on SiC (2009), first reported BJT with high current gain of >100 on SiC (2010), first reported 12 kV Gate turn-off Thyristor on SiC (2011), and first reported 12 kV optically triggered Gate turn-off Thyristor on SiC (2012).
Zhang is also co-author of more than 75 technical papers and conference presentations; the first inventor on 64 US and numerous international patents; and author of a book chapter on SiC devices.“We are extremely fortunate to have someone of Zhang’s calibre join PowerAmerica,” said Victor Veliadis,deputy executive director and CTO. “He has an outstanding track record of accomplishment in power semiconductor devices and will play a key role in supporting the PowerAmerica goal of creating US manufacturing jobs through accelerated adoption of SiC and GaN power electronics.”
