For first-half 2017, deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany has reported revenue of €114.1m, more than...
Read moreResearchers in the USA have developed gallium nitride (GaN) high-electron-mobility transistors (HEMTs) fabricated on 200mm-diameter silicon-on-insulator (SOI) substrates with multiple...
Read moreFor first-half 2017, Riber S.A. of Bezons, France, which manufactures molecular beam epitaxy (MBE) systems as well as evaporation sources...
Read moreFor fiscal third-quarter 2017 (to end-June), Skyworks Solutions Inc of Woburn, MA, USA (which manufactures analog and mixed-signal semiconductors) has...
Read moreAt the 12th International Conference on Nitride Semiconductors (ICNS-12) in Strasbourg, France (24-28 July), Tokyo-based Fujitsu Ltd and Fujitsu Laboratories...
Read moreThrough the US Department of Energy’s SunShot Initiative Program (which to drive down the cost of solar electricity and support...
Read moreA major bottleneck in the commercialization of micro-LED displays is the mass transfer of micron-size LEDs to a display backplane,...
Read moreIn a trading statement, IQE has reported that it expects to deliver revenues of £70m for the first half...
Read moreCree has expanded its family of Architectural Lighting Class LEDs with the new CLQ6A RGBW (red, green, blue and white)...
Read moreBreakthroughs in mass transfer to display backplane have yet to materialise, says TrendForce Research by LEDinside, a division of TrendForce,...
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