Littelfuse Inc of Chicago, IL, USA,, which provides circuit protection technologies (including fuses, semiconductors, polymers, ceramics, relays and sensors), has launched its first series of silicon carbide (SiC) MOSFETs as the latest addition to its growing power semiconductor line.
In March, Littelfuse took another step in the power semiconductor industry through a majority investment in SiC technology development company Monolith Semiconductor Inc of Round Rock, TX, USA. With a voltage rating of 1200V and ultra-low on-resistance of 80mΩ, the LSIC1MO120E0080 Series is the first organically designed, developed and manufactured SiC MOSFETs to be released by this partnership. The device is optimized for high-frequency switching applications, providing a combination of ultra-low switching losses and ultra-fast switching speeds that is said to be unavailable with traditional power transistor solutions.
Compared with silicon devices that have the same rating, the SiC MOSFET Series enables substantially greater energy efficiency, reduced system size/weight, and increased power density in power electronics systems, says Littelfuse. It also offers superior robustness and performance, even at high operating temperatures (150°C), the firm adds.
Typical applications for the new SiC MOSFETs include power conversion systems such as solar inverters, switch mode power supplies (SMPS), uninterruptible power supply (UPS) systems, motor drives, high-voltage DC/DC converters, battery chargers, and induction heating.
“Our SiC MOSFET application support network is prepared to help customers enhance the performance of their existing designs, as well as assist those developing new power converter products,” says Michael Ketterer, product marketing manager for Power Semiconductors in Littelfuse’s Electronics business unit.
The LSIC1MO120E0080 Series SiC MOSFET is available in TO-247-3L packaging and provided in tubes in quantities of 450. Sample requests may be placed through authorized Littelfuse distributors worldwide.
