MicroWave Technology Inc (MwT) of Fremont, CA, USA (a division of IXYS Corp that makes RF and microwave discrete devices, MMICs, hybrid modules and connecterized amplifiers for wireless communication infrastructure, military/aerospace, industrial and medical applications) has launched its gallium arsenide/aluminium gallium arsenide (GaAs/AlGaAs) pseudomorpic high-electron-mobility transistor (pHEMT)-based Ka-band monolithic microwave integrated circuit (MMIC) high-power amplifier, which has been used by a major wireless communication equipment manufacturer for high-data-rate links in 4G/5G wireless infrastructure applications.
The MMA-273336-M5 Ka-band MMIC power amplifier is a standard MMIC product available in volume production. Operating at 27-33GHz, it provides a P1dB (output power at a 1dB gain compression point) of 35dBm (over 3W) and what is claimed to be an exceptional P3dB (output power at a 3dB gain compression point) of 36dBm (4W). Typical small-signal gain is 22dB across the band. The level of third-order intermodulation (IM3) distortion is -40dBc at 20dBm output power per tune. The DC bias conditions are 6V and 2.8A on the drain and -0.9V on the gate.
“The applications of this MMIC high-power amplifier include 4G/5G wireless infrastructure, very small aperture terminal (VSAT) transmitters, and point-to-point (PtP) microwave links for high-data-rate communications, as well as military and space applications,” says MwT general manager Dr Greg Zhou. “The exceptional power level from the MMA-273336-M5 exceeds the output power specification demanded by today’s emerging Ka-band (30GHz) high-data-rate applications,” he adds.
The MMA-273336-M5 is fully matched for both input and output terminals for easy cascade and is packaged in a low-cost M5 (5mm x 5mm) surface-mount package with what are claimed to be excellent thermal characteristics. The mean time before failure (MTBF) is over 100 years at 85°C ambient temperature. Evaluation boards for this and other power amplifiers are available now.
