- 2N7002 MOSFET is an N-Channel enhancement mode MOSFET.
- It is produced using a proprietary, high cell density, DMOS technology.
- This evolution of MOSFET is used to minimize on-state resistance while providing rugged, reliable, and fast switching performance.
Pin Name and description
- Pin1 Source : Current flows out through Source
- Pin2 Gate : Controls the biasing of the MOSFET
- Pin3 Drain : Current flows in through Drain
Characteristics
- low on-state resistance
- Drain Current (ID) is 200mA
- Drain Source Voltage (VDS) is 60V
- On-state Resistance is <5Ω
- The Minimum Gate threshold voltage (VGS-th) is 1V
- The maximum Gate threshold voltage (VGS-th) is 3V
Applications
- DC-DC converters.
- Power management applications.
- eMobility applications.
- This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
